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參數(shù)資料
| 型號： | SPF-2086TK |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Noise pHEMT GaAs FET |
| 中文描述： | 低噪聲砷化鎵場效應(yīng)管pHEMT制 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 583K |
| 代理商： | SPF-2086TK |
http://www.sirenza.com
Phone: (800) SMI-MMIC
2
EDS-101225 Rev. D
303 S. Technology Court, Broomfield, CO 80021
SPF-2086TK Low Noise FET
Noise parameters, at typical operating frequencies
F
REQ
H
G
Z
F
MIN
B
d
|
G
OPT
|
G
OPT
A
NG
r
N
W
G
A
B
d
0
8
2
4
7
7
1
2
2
1
2
0
4
4
9
6
1
3
8
1
8
1
0
4
5
4
5
4
8
9
0
9
1
0
0
7
8
2
9
7
1
5
0
2
1
Bias V
DS
=3.0V, I
DS
=20mA
F
REQ
H
G
Z
F
MIN
B
d
|
G
OPT
|
G
OPT
A
NG
r
N
W
G
A
B
d
0
4
3
6
7
9
1
7
2
9
2
0
5
5
7
6
6
3
3
2
1
1
0
5
7
7
4
3
9
1
1
0
1
0
4
0
1
3
0
7
1
6
0
9
1
Bias V
DS
=5.0V, I
DS
=40mA
Operation of this device beyond any one of these
parameters may cause permanent damage.
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
P
DC
- P
OUT
< (T
J
- T
L
) / R
TH
where:
P
DC
= I
* V
(W)
P
OUT
= RF Output Power (W)
T
J
T
L
= Lead Temperature (pin 4) (°C)
R
TH
= Thermal Resistance (°C/W)
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
P
l
o
b
m
y
S
e
u
V
t
n
U
n
r
D
t
e
r
C
I
S
D
I
S
S
D
A
m
e
G
d
r
a
w
r
o
F
t
e
r
C
I
F
S
G
3
A
m
t
e
r
C
e
G
e
s
e
v
e
R
I
R
S
G
3
A
m
e
c
o
S
-
o
r
D
e
g
a
V
V
S
D
7
+
V
n
r
D
-
o
e
G
e
g
a
V
V
D
G
8
-
V
e
c
o
S
-
o
e
G
e
g
a
V
V
S
G
0
>
r
o
5
-
<
V
r
e
w
o
P
t
p
n
F
R
P
N
I
0
0
1
W
m
e
r
r
e
p
m
e
T
g
n
r
e
p
O
T
P
O
5
8
+
o
0
4
-
C
°
e
g
n
a
R
e
r
r
e
p
m
e
T
e
g
a
r
o
S
T
r
o
0
5
1
+
o
0
4
-
C
°
n
o
p
s
D
r
e
w
o
P
P
S
D
S
0
0
6
W
m
e
r
r
e
p
m
e
T
l
n
n
a
h
C
T
J
+
0
5
1
C
°
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