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參數(shù)資料
| 型號： | SPDU04N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 268K |
| 代理商： | SPDU04N60S5 |
2004-03-30
Rev. 2.1
Page 2
SPU04N60S5
SPD04N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 4.5 A,
T
j
= 125 °C
d
v
/d
t
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
2.5
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
K/W
Thermal resistance, junction - ambient, leaded
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
600
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=4.5A
-
700
-
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=200
μΑ
,
V
GS
=
V
DS
V
DS
=600V,
V
GS
=0V,
3.5
4.5
5.5
T
j
=25°C,
T
j
=150°C
-
-
0.5
-
1
50
μA
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=2.8A,
T
j
=25°C
T
j
=150°C
-
-
0.85
2.3
0.95
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
20
-
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