參數(shù)資料
型號(hào): SPD50P03L
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS-P Power - Transistor
中文描述: 的OptiMOS磷電源-晶體管
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 77K
代理商: SPD50P03L
2001-12-06
Page 2
Preliminary data
SPD50P03L
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
R
thJC
R
thJA
-
-
1
K/W
@ min. footprint, t < 10s
@ 6 cm
2
cooling area
1)
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=-250μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-250μA
Zero gate voltage drain current
V
(BR)DSS
-30
-
-
V
V
GS(th)
-1
-1.5
-2
V
DS
=-30V,
V
GS
=0,
T
j
=25°C
V
DS
=-30V,
V
GS
=0,
T
j
=150°C
Gate-source leakage current
I
DSS
-
-
-0.1
-10
-1
-100
μA
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
I
GSS
-
-10
-100
nA
V
GS
=-4.5V,
I
D
=-30A
Drain-source on-state resistance
R
DS(on)
-
8.5
12.5
m
V
GS
=-10V,
I
D
=-50A
R
DS(on)
-
5.7
7
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air; t
10 sec.
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