參數(shù)資料
型號: SPD28N05L
廠商: SIEMENS A G
元件分類: 功率晶體管
英文描述: SIPMOS Power Transistor
中文描述: 28 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/8頁
文件大?。?/td> 130K
代理商: SPD28N05L
Semiconductor Group
4
30/Jan/1998
SPD28N05L
SPU28N05L
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
I
S
-
-
28
A
T
C
= 25 °C
Inverse diode forward voltage
I
SM
-
-
112
V
GS
= 0 V,
I
F
= 56 A
Reverse recovery time
V
SD
-
1.1
1.8
V
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
t
rr
-
60
90
ns
V
R
= 30 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/μs
Q
rr
-
0.15
0.25
μC
相關(guān)PDF資料
PDF描述
SPU30N03L SIPMOS Power Transistor
SPD30N03L SIPMOS Power Transistor
SPU30N03S2-08 OptiMOS Power-Transistor
SPU30N03S2L-10 OptiMOS Power-Transistor
SPU30P06P SIPMOS Power-Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPD30N03 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor
SPD30N03L 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Power Transistor
SPD30N03S2L-07 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPD30N03S2L-07 G 功能描述:MOSFET N-Channel 30V MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPD30N03S2L-07_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated