參數(shù)資料
型號(hào): SPD28N03
廠商: INFINEON TECHNOLOGIES AG
英文描述: Insulation Displacement (IDC) Connector; No. of Contacts:50; Contact Termination:IDC; Gender:Female; Contact Plating:Nickel; Pitch Spacing:0.05" RoHS Compliant: Yes
中文描述: SIPMOS功率晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 142K
代理商: SPD28N03
SPD 28N03
Data Sheet
1
06.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
30
V
DS
R
DS(on)
I
D
V
A
0.023
28
Features
N channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
175C operating temperature
Pin 1
G
Pin 2
D
Pin 3
S
Packaging
Tape and Reel
Tube
Type
SPD28N03
SPU28N03
Package
P-TO252
P-TO251-3-1
Ordering Code
Q67040-S4138
Q67040-S4140-A2
Maximum Ratings
, at
T
j = 25 C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 C,
1)
T
C
= 100 C
Pulsed drain current
T
C
= 25 C
Avalanche energy, single pulse
I
D
= 28 A,
V
DD
= 25 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
I
S
= 28 A,
V
DS
= 24 V, d
i
/d
t
= 200 A/μs,
T
jmax
= 175 C
Gate source voltage
Power dissipation
T
C
= 25 C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
Unit
A
Value
28
28
I
D
I
Dpulse
112
mJ
E
AS
145
7.5
6
kV/μs
E
AR
d
v
/d
t
V
GS
P
tot
±
20
75
V
W
T
j ,
T
stg
C
-55... +175
55/175/56
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SPD30N03S2L-07 功能描述:MOSFET N-CH 30V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube