參數(shù)資料
型號： SPD23N05
廠商： SIEMENS A G
元件分類： 功率晶體管
英文描述： SIPMOS Power Transistor
中文描述： 23 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/8頁
文件大?。?/td> 148K
代理商： SPD23N05
Semiconductor Group
1
29/Jan/1998
SPD23N05
SPU23N05
SIPMOS
Power Transistor
N channel
Enhancement mode
Avalanche-rated
d
v
/d
t
rated
175°C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
55 V
I
D
22 A
R
DS(on
)
0.06
0.06
Package
Ordering Code
SPD23N05
P-TO252
Q67040 - S4138 - A2
SPU23N05
55 V
22 A
P-TO251
Q67040 - S4131 - A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
I
D
16
22
A
T
C
= 25 °C
Avalanche energy, single pulse
I
Dpuls
88
I
D
= 22 A,
V
DD
= 25 V,
R
GS
= 25
L
= 372 μH,
T
j
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Reverse diode d
v
/d
t
E
AS
90
mJ
I
AR
E
AR
d
v
/d
t
22
A
5.5
mJ
I
S
= 22 A,
V
DS
= 40 V, d
i
F
/d
t
= 200 A/μs
T
jmax
= 175 °C
Gate source voltage
6
±
20
kV/μs
V
GS
P
tot
V
Power dissipation
T
C
= 25 °C
55
W
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