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參數(shù)資料
| 型號： | SPD14N06S2-80 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 259K |
| 代理商： | SPD14N06S2-80 |
2003-05-09
Page 3
SPD14N06S2-80
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=12A
5.2
10.4
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
302
78
400
104
pF
Reverse transfer capacitance
Turn-on delay time
-
-
26
7
38
11
V
DD
=30V,
V
GS
=10V,
I
D
=14A,
R
G
=39
ns
Rise time
-
28
42
Turn-off delay time
Fall time
-
-
22
27
33
40
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=44V,
I
D
=14A
-
-
1.6
3
2
5
nC
Gate charge total
V
DD
=44V,
I
D
=14A,
V
GS
=0 to 10V
-
8
10
Gate plateau voltage
V
(plateau)
V
DD
=44V,
I
D
=14A
-
5.5
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
17
A
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
-
-
68
V
GS
=0V,
I
F
=14A
-
0.9
1.3
V
V
R
=30V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
-
25
35
31
44
ns
nC
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