參數(shù)資料
型號(hào): SPD03N60S5
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 290K
代理商: SPD03N60S5
2003-10-02
Page 1
SPD03N60C3
SPU03N60C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
V
DS
@
T
jmax
R
DS(on)
I
D
650
V
A
1.4
3.2
P-TO252
P-TO251
Type
SPD03N60C3
Package
P-TO252
Ordering Code
Q67040-S4421
SPU03N60C3
P-TO251
-
Marking
03N60C3
03N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 2.4 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 3.2 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
I
D
3.2
2
I
D puls
E
AS
9.6
100
mJ
E
AR
0.2
3.2
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
38
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
W
-55... +150
°C
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