參數(shù)資料
型號(hào): SPD02N60
廠商: SIEMENS A G
元件分類: JFETs
英文描述: SIPMO Power Transistor
中文描述: 2 A, 600 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 1/9頁
文件大?。?/td> 86K
代理商: SPD02N60
Semiconductor Group
10 / 1998
1
SPD02N60
SPU02N60
Preliminary data
SIPMOS
Power Transistor
N-Channel
Enhancement mode
Avalanche rated
Pin 2
D
Pin 3
S
Pin 1
G
@ V
GS
V
GS
= 10 V
Type
SPD02N60
SPU02N60
V
DS
600 V
R
DS(on)
5.5
Ordering Code
Q67040-S4133
Q67040-S4127-A2
Package
P-TO252
P-TO251
I
D
2 A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 2 A,
V
DD
= 50 V,
R
GS
= 25
,
T
j
= 25 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
I
D
A
2
1.3
I
Dpulse
8
mJ
135
E
AS
±
20
55
V
W
V
GS
P
tot
°C
T
j
T
stg
-55 ... +150
-55 ... +150
55/150/56
Maximum Ratings,
at
T
j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
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