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參數(shù)資料
| 型號： | SPB47N10L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power-Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 514K |
| 代理商： | SPB47N10L |
2001-08-24
Page 1
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
SIPMOS
=
Power-Transistor
Feature
Product Summary
V
DS
R
DS(on)
I
D
100
V
26
m
47
A
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P-TO263-3-2
P-TO220-3-1
P-TO262-3-1
Marking
47N10L
47N10L
47N10L
Type
SPP47N10L
Package
P-TO220-3-1
Ordering Code
Q67040-S4177
SPB47N10L
P-TO263-3-2
Q67040-S4176
SPI47N10L
P-TO262-3-1
tbd
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
=25°C
T
C
=100°C
Pulsed drain current
I
D
47
33
T
C
=25°C
Avalanche energy, single pulse
I
D puls
188
I
D
=47 A ,
V
DD
=25V,
R
GS
=25
Avalanche energy, periodic limited by
T
jmax
Reverse diode d
v
/d
t
E
AS
400
mJ
E
AR
d
v
/d
t
17.5
I
S
=47A,
V
DS
=0V,
d
i
/d
t
=200A/μs
Gate source voltage
6
kV/μs
V
GS
P
tot
±20
175
V
Power dissipation
T
C
=25°C
Operating and storage temperature
W
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
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