參數(shù)資料
型號(hào)： SPB20N60C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 163K
代理商： SPB20N60C3
2002-08-12
Page 1
SPP20N60C2, SPB20N60C2
SPA20N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Product Summary
V
DS
@
T
jmax
650
0.19
20
V
A
R
DS(on)
I
D
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
20N60C2
20N60C2
20N60C2
Type
SPP20N60C2
SPB20N60C2
SPA20N60C2
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4333
Ordering Code
Q67040-S4320
Q67040-S4322
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
20
1)
13
1)
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
20
13
A
I
D puls
E
AS
40
690
40
690
A
mJ
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
E
AR
1
1
I
AR
d
v
/d
t
20
6
20
6
A
V/ns
I
S
= 20 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
μ
s,
T
jmax
=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
208
±20
±
30
34.5
V
W
SPP_B
-55...+150
°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPB20N60C3 制造商:Infineon Technologies AG 功能描述:MOSFET COOLMOS N D2-PAK
SPB20N60C3_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS Power Transistor Feature new revolutionary high voltage technology
SPB20N60C3ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20.7A D2PAK
SPB20N60C3-E3045A 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(2+Tab) TO-263 T/R
SPB20N60CFD 功能描述:MOSFET COOL MOS 600 V 3.0Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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