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參數(shù)資料
| 型號： | SPB16N50C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 363K |
| 代理商： | SPB16N50C3 |
2004-04-07
Rev. 2.1
Page 1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
560
0.28
V
A
16
P-TO262
P-TO220-3-1
P-TO220-3-31
P-TO263-3-2
2
P-TO220-3-1
23
1
P-TO220-3-31
1
2
3
Marking
16N50C3
16N50C3
16N50C3
16N50C3
Type
SPP16N50C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4583
SPB16N50C3
P-TO263-3-2
Q67040-S4642
SPI16N50C3
P-TO262
Q67040-S4582
SPA16N50C3
P-TO220-3-31 Q67040-S4581
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_B_I
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
16
10
16
1)
10
1)
A
I
D puls
E
AS
48
48
A
I
D
=8,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=16A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
460
460
mJ
E
AR
0.64
0.64
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
16
16
A
±20
±
30
160
±20
±
30
34
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
-55...+150
°C
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| SPB16N50C3_05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS Power Transistor |
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| SPB17N80C3 | 功能描述:MOSFET COOL MOS PWR TRANS 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPB17N80C3_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:CoolMOS? Power Transistor Features new revolutionary high voltage technology |
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