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參數(shù)資料
| 型號： | SPB02N60S5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 282K |
| 代理商： | SPB02N60S5 |
2003-10-02
Page 1
SPP02N60C3
SPB02N60C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
V
DS
@
T
jmax
R
DS(on)
I
D
650
V
A
3
1.8
P-TO220-3-1
P-TO263-3-2
Type
SPP02N60C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4392
SPB02N60C3
P-TO263-3-2
Q67040-S4393
Marking
02N60C3
02N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 1.35 A,
V
DD
= 50 V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
I
D
= 1.8 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage static
I
D
1.8
1.1
I
D puls
E
AS
5.4
50
mJ
E
AR
0.07
1.8
A
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
25
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C = 25°C
Operating and storage temperature
W
-55... +150
°C
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