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參數(shù)資料
| 型號： | SMJ418160 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 1048576由16位動態(tài)隨機存取存儲器 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大?。?/td> | 356K |
| 代理商： | SMJ418160 |
SMJ416160, SMJ418160
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SGMS720D – APRIL 1995 – REVISED SEPTEMBER 1997
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements (continued)
’41x160-70
MIN
’41x160-80
MIN
UNIT
MAX
MAX
tCLCH
tRHCP
tOEH
tROH
tCP
tAWD
tCHR
tCRP
tCSH
tCSR
tCWD
tOED
tRAD
tRAL
tCAL
tRCD
tRPC
tRSH
tRWD
tCPW
Hold time, xCAS low to xCAS going high
5
5
ns
Hold time, RAS low after xCAS precharge
40
45
ns
Hold time, OE command
18
20
ns
Hold time, RAS referenced to OE
10
10
ns
Delay time, xCAS high (precharge)
10
10
ns
Delay time, column address to W going low (read-write operation only)
63
70
ns
Delay time, RAS low to xCAS going high (CBR refresh only)
10
10
ns
Delay time, xCAS high to RAS going low
5
5
ns
Delay time, RAS low to xCAS going high
70
80
ns
Delay time, xCAS low to RAS going low (CBR refresh only)
5
5
ns
Delay time, xCAS low to W going low (read-write operation only)
46
50
ns
Delay time, OE to data
18
20
ns
Delay time, RAS low to column address (see Note 12)
15
35
15
40
ns
Delay time, column address to RAS going high
35
40
ns
Delay time, column address to xCAS going high
35
40
ns
Delay time, RAS low to xCAS low (see Note 12)
20
52
20
60
ns
Delay time, RAS high to xCAS going low
0
0
ns
Delay time, xCAS low to RAS going high
18
20
ns
Delay time, RAS low to W going low (read-write operation only)
98
110
ns
Delay time, W going low after xCAS precharge (read-write operation only)
68
75
ns
tREF
Refresh time interval
’416160
32
32
ms
’418160
8
8
tT
Transition time (see Note 13)
3
30
3
30
ns
NOTES: 12. The maximum value is specified only to ensure access time.
13. Transition times (rise and fall) should be a minimum of 3 ns and a maximum of 30 ns. This is ensured by design but not tested.
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