參數(shù)資料
型號(hào)： SMJ416160
廠商： Texas Instruments, Inc.
英文描述： 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES
中文描述： 1048576由16位動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器
文件頁(yè)數(shù)： 7/24頁(yè)
文件大?。?/td> 356K
代理商： SMJ416160
SMJ416160, SMJ418160
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SGMS720D – APRIL 1995 – REVISED SEPTEMBER 1997
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
SMJ416160
PARAMETER
TEST CONDITIONS
’416160-70
MIN
’416160-80
MIN
UNIT
MAX
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
V
VOL
Low-level output voltage
IOL = 4.2 mA
VCC = 5.5 V,
All others = 0 V to VCC
VCC = 5.5 V,
xCAS high
0.4
0.4
V
II
Input current (leakage)
VI = 0 V to 6.5 V,
±
10
±
10
μ
A
IO
Output current (leakage)
VO = 0 V to VCC,
±
10
±
10
μ
A
ICC1§
Read- or write-cycle current
VCC = 5.5 V,
VIH = 2.4 V (TTL),
After one memory cycle,
RAS and xCAS high
Minimum cycle
80
70
mA
ICC2
Standby current
2
2
mA
VIH = VCC – 0.2 V (CMOS),
After one memory cycle,
RAS and xCAS high
1
1
mA
ICC3§
Average refresh current (RAS only refresh or
CBR)
VCC = 5.5 V,
RAS cycling,
xCAS high (RAS only),
RAS low after xCAS low (CBR)
VCC = 5.5 V,
RAS low,
Minimum cycle,
80
70
mA
ICC4
Average page current
tPC = MIN,
xCAS cycling
80
70
mA
ICC7
Standby current, outputs enabled
RAS = VIH,
Data out = enabled
xCAS = VIL,
5
5
mA
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RAS = VIL
Measured with a maximum of one address change while xCAS = VIH
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PDF描述
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