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參數(shù)資料
| 型號： | SM25GZ51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 199K |
| 代理商： | SM25GZ51 |
SM25GZ51,SM25JZ51
2001-07-13
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE
SM25GZ51,SM25JZ51
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400, 600V
R.M.S On
State Current
High Commutating (dv / dt)
Isolation Voltage
MAXIMUM RATINGS
: I
T (RMS)
= 25A
: (dv / dt) c =
1
0V / μs
: V
Isol
=
1
500V AC
JEDEC
JEITA
TOSHIBA
Weight: 5.9g
―
―
13
16A1A
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM25GZ51
400
Repetitive Peak
Off
State Voltage
SM25JZ51
V
DRM
600
V
R.M.S On
State Current
(Full Sine Waveform Tc = 73°C)
I
T (RMS)
25
A
230 (50Hz)
Peak One Cycle Surge On
State
Current (Non-Repetitive)
I
TSM
253 (60Hz)
A
I
2
t Limit Value
I
2
t
260
A
2
s
Critical Rate of Rise
of On
State Current
(Note 1)
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
GM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
Isolation Voltage (AC, t = 1 min.)
V
Isol
1500
V
Unit: mm
Note 1: di / dt Test Condition
V
DRM
= 0.5 × Rated
I
TM
≤
40A
t
gw
≥
10μs
t
gr
≤
250ns
i
gp
= I
GT
× 2.0
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