參數(shù)資料
型號(hào)： SL2610LH1N
廠商： Zarlink Semiconductor Inc.
英文描述： Wide Dynamic Range Image Reject MOPLL
中文描述： 寬動(dòng)態(tài)范圍圖像拒絕MOPLL
文件頁(yè)數(shù)： 22/27頁(yè)
文件大小： 593K
代理商： SL2610LH1N
SL2610
Data Sheet
22
Zarlink Semiconductor Inc.
Notes
1
2
All power levels are referred to 50
,
and 0 dBm = 107 dB
μ
V.
Total system with final load as in Figure 7, including an interstage IF shaping filter with IL of 2 dB and
characteristic impedance of 200
differential.
The specified gain is determined by the following formula;
Gs = Gm + Vtr where
Gs = gain as specified
Gm = gain as measured with specified load conditions
Vtr = voltage transformation ratio of transformer as in Figure 7
Two input tones within RF operating range at -14 dBm from 50
single ended source with 200
differential output load. DC output
current must be shunted to Vcc through suitable inductor, i.e. 10
μ
H.
Modulation spurs introduced on local oscillator through injection locking of the local oscillator by an
undesired RF carrier.
Desired carrier at 80 dB
μ
V, undesired carrier at 90 dB
μ
V at an offset frequency of f
d
plus 42+f
c
MHz,
where f
d
is desired carrier frequency, f
c
is US chrominance sub carrier and 42 equals 7 channel spacings.
All intermodulation specifications are measured with a single-ended input.
Operation range is defined as the region over which the oscillator presents a negative impedance.
Target to achieve 6 dB minimum S11.
3
4
5
6
7
8
Characteristic
Pin
Min.
Typ.
Max.
Units
Conditions
Charge pump output
current
16
See Table 6.
Vpin16 = 2 V
Charge pump output
leakage
16
+3
+10
nA
Vpin16 = 2 V
Charge pump drive
output current
15
0.5
mA
Vpin15 = 0.7 V
Crystal frequency
17,
18
4
16
MHz
Application as in Figure 6.
Recommended crystal
series resonance
10
200
4 MHz parallel resonant crystal.
External reference input
frequency
17,
18
4
20
MHz
Sinewave coupled through 10 nF
blocking capacitor.
External reference drive
level
18
0.2
0.5
Vpp
Sinewave coupled through 10 nF
blocking capacitor.
Phase detector
comparison frequency
.03125
0.25
MHz
Equivalent phase noise
at phase detector
-158
With 4 MHz crystal, SSB, within loop
bandwidth.
With Fcomp = 125 kHz
RF division ratio
240
32767
Reference division ratio
See Table 1.
Switching ports P0-P3
sink current
leakage current
1, 5,
6, 14
10
10
mA
μ
A
Vport = 0.7 V
Vport = Vcc
Address select
Input high current
Input low current
24
1
-0.5
mA
mA
See Table 4.
Vin=Vcc
Vin=Vee
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