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參數(shù)資料
| 型號： | 2SD1920 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 1A條一（c）|園區(qū) |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SD1920 |
2
Transistor
2SD1478, 2SD1478A
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
0
200
160
40
120
80
0
240
200
160
120
80
40
Ambient temperature Ta (C)
C
C
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
0.1
0.3
1
3
10
30
100
300
1000
Ta=25C
I
B
=50
μ
A
45
μ
A
40
μ
A
35
μ
A
5
μ
A
10
μ
A
15
μ
A
20
μ
A
25
μ
A
30
μ
A
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
25C
–25C
Ta=75C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=–25C
25C
75C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=10V
Ta=75C
25C
–25C
F
F
1
3
10
30
100
0
6
5
4
3
2
1
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1510 | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1510P | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SD1510Q | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1510R | TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186 |
| 2SD1511Q | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1921 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FTL50V .5A .4W ECB |
| 2SD1922 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92MOD 25V .8A .9W ECB |
| 2SD1933 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-220FP80V 4A 30W BCE |
| 2SD1936T-SSH | 制造商:ON Semiconductor 功能描述: |
| 2SD1938 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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