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參數(shù)資料
| 型號： | 2SD2216L |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | For General Amplification |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ML4-N1, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SD2216L |
Transistors
2SD2216L
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJC00250BED
For general amplification
Complementary to 2SB1462L
■
Features
High forward current transfer ratio h
FE
Mold lead-less type package, allowing downsizing and thinning
of the equipment and automatic insertion through the tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
I
C
7
V
Collector current
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
*
P
C
T
j
T
stg
150
mW
Junction temperature
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
60
V
Collector-emitter voltage (Base open)
50
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
100
Forward current transfer ratio
h
FE1
V
CE
= 10 V, I
C
= 2 mA
180
390
h
FE2
V
CE(sat)
V
CE
= 2 V, I
C
= 100 mA
I
C
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
90
Collector-emitter saturation voltage
0.1
0.3
V
Transition frequency
f
T
C
ob
80
MHz
Collector output capacitance
(Common base, input open circuited)
3.5
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
0
±
0
0
±
0
0
±
0
0
1.00
±
0.05
0.60
±
0.05
0.60
0.05
±
0.03
0.30
±
0.03
0.020
±
0.010
1
2
4
3
2
1
3
4
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1 : Base
2 : Emitter
3 : Collector
4 : Collector
ML4-N1 Package
Marking Symbol: L
Note)*: Printed circuit board: Copper foil area of 20.0 mm
2
or more, and
the board thickness of 1.6 mm for the collector portion
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| 2SD2217 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SD2218Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2218R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
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