- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368615 > SI4425BDY (Vishay Intertechnology,Inc.) P-Channel 30-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4425BDY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI4425BDY |
FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
Si4425BDY
Vishay Siliconix
New Product
Document Number: 72000
S-21862—Rev. B, 21-Oct-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.012 @ V
GS
= -10 V
-11.4
-30
0.019 @ V
GS
= -4.5 V
- 9.1
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
- 11.4
-8.8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
- 9.1
-7.0
Pulsed Drain Current
I
DM
-50
A
continuous Source Current (Diode Conduction)
a
I
S
-2.1
-1.3
T
A
= 25 C
2.5
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.6
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
40
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
18
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI4425DY | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| SI4429EDY | P-Channel 30-V (D-S) MOSFET |
| SI4451DY | P-Channel 12-V (D-S) MOSFET |
| SI4462DY | N-Channel 200-V (D-S) MOSFET |
| SI4470EY | N-Channel 60-V (D-S) MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4425BDY-E3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N |
| SI4425BDY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
| SI4425BDY-T1-E3 | 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4425BDY-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CH MOSFET |
| SI4425BDY-T1-GE3 | 功能描述:MOSFET 30V 11.4A 2.5W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。