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參數(shù)資料
| 型號(hào)： | SI4411DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFE |
| 中文描述： | P溝道30 V的（副）MOSFE |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | SI4411DY |
Si4411DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72149
S-03539—Rev. B, 24-Mar-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -24 V, V
GS
= 0 V
-1
A
V
DS
= -24 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V
-30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -10 V, I
D
= -13 A
0.008
0.010
V
GS
= -4.5 V, I
D
= -10 A
0.0125
0.0155
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -13 A
40
S
Diode Forward Voltage
a
V
SD
I
S
= -2.7 A, V
GS
= 0 V
-0.74
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
43
65
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -5 V, I
D
= -13 A
8.5
nC
Gate-Drain Charge
Q
gd
18.5
Turn-On Delay Time
t
d(on)
18
30
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
15
25
ns
Turn-Off Delay Time
t
d(off)
I
D
140
250
Fall Time
t
f
75
120
Gate Resistance
R
g
3.4
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.1 A, di/dt = 100 A/ s
60
100
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 10 thru 4 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
3 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4411DY-T1 | P-Channel 30-V (D-S) MOSFE |
| Si4418DY-E3 | N-Channel 200-V (D-S) MOSFET |
| Si4418DY-T1-E3 | N-Channel 200-V (D-S) MOSFET |
| SI4418DY | N-Channel 200-V (D-S) MOSFET |
| SI4425BDY | P-Channel 30-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4411DY-T1 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFE |
| SI4411DY-T1-E3 | 功能描述:MOSFET 30V 13A 3.0W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4411DY-T1-GE3 | 功能描述:MOSFET 30V 13A 3.0W 10mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY-E3 | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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