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參數(shù)資料
| 型號： | SI4394DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qdg, Fast Switching WFET |
| 中文描述： | N溝道減少Q(mào)dg，快速開關(guān)WFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SI4394DY |
Si4394DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72713
S-40442—Rev. A, 15-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 15 A
0.0066
0.00825
V
GS
= 4.5 V, I
D
= 14 A
0.0077
0.00975
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
65
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.73
1.1
V
Dynamic
b
Input Capacitance
C
iss
1900
Output Capacitance
C
oss
V
DS
= 15 V,
V
GS
= 0 V, f = 1 MHz
530
pF
Reverse Transfer Capacitance
C
rss
120
Total Gate Charge
Q
g
12.5
Gate-Source Charge
Q
gs
V
= 15 V, V
GS =
4.5 V, I
= 15 A
DS
3.9
nC
Gate-Drain Charge
Q
gd
D
2.1
Gate Resistance
R
g
f = 1 MHz
0.8
1.2
1.8
Turn-On Delay Time
t
d(on)
13
20
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, Rg = 6
8
13
Turn-Off Delay Time
t
d(off)
I
D
48
75
ns
Fall Time
t
f
13
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
36
55
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 10 thru 3 V
T
C
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4394DY-E3 | N-Channel Reduced Qdg, Fast Switching WFET |
| SI4394DY-T1-E3 | N-Channel Reduced Qdg, Fast Switching WFET |
| SI4403DY | P-Channel 1.8-V (G-S) MOSFET |
| SI4403BDY | P-Channel 1.8-V (G-S) MOSFET |
| SI4403BDY-T1 | P-Channel 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4394DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4394DY-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qdg, Fast Switching WFET |
| SI4394DY-T1-E3 | 功能描述:MOSFET 30V 15A 2.7W 8.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4396DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4396DY-T1-E3 | 功能描述:MOSFET 30V 16A 5.4W 11.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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