參數(shù)資料
型號: SI4392DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss
中文描述: N溝道,低Qg,快速開關(guān) WFET,超低開關(guān)損耗
文件頁數(shù): 5/5頁
文件大?。?/td> 55K
代理商: SI4392DY
Si4392DY
Vishay Siliconix
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
相關(guān)PDF資料
PDF描述
SI4394DY N-Channel Reduced Qdg, Fast Switching WFET
SI4394DY-E3 N-Channel Reduced Qdg, Fast Switching WFET
SI4394DY-T1-E3 N-Channel Reduced Qdg, Fast Switching WFET
SI4403DY P-Channel 1.8-V (G-S) MOSFET
SI4403BDY P-Channel 1.8-V (G-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4392DY_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET㈢
SI4392DY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET
SI4392DY-T1 功能描述:MOSFET 30V 12.5A 3.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4392DY-T1-E3 功能描述:MOSFET 30V 12.5A 3.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4394DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET