參數(shù)資料
型號(hào): SI4378DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V (D-S) MOSFET
中文描述: N通道20V(D-S)MOSFET
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 55K
代理商: SI4378DY
Si4378DY
Vishay Siliconix
New Product
Document Number: 72918
S-40854—Rev. A, 03-May-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
2000
4000
6000
8000
10000
0
4
8
12
16
20
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0
10
20
30
40
50
60
0
1
2
3
4
5
6
0
10
20
30
40
50
60
70
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
C
rss
V
DS
= 10 V
I
D
= 25 A
V
GS
= 4.5 V
I
D
V
GS
= 2.5 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
V
DS
Drain-to-Source Voltage (V)
C
V
G
r
D
)
I
D
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
V
GS
= 4.5 V
1.0
1.2
0.000
0.003
0.006
0.009
0.012
0.015
0
2
4
6
8
10
1
10
50
I
D
= 25 A
0.00
0.2
0.4
0.6
0.8
T
J
= 25 C
T
J
= 150 C
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
C
oss
C
iss
r
D
(
相關(guān)PDF資料
PDF描述
Si4378DY-E3 N-Channel 20-V (D-S) MOSFET
Si4378DY-T1-E3 N-Channel 20-V (D-S) MOSFET
SI4392DY-E3 N-Channel Reduced Qg, Fast Switching WFET
SI4392DY-T1 N-Channel Reduced Qg, Fast Switching WFET
SI4392DY-T1-E3 N-Channel Reduced Qg, Fast Switching WFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4378DY_RC 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R-C Thermal Model Parameters
SI4378DY-E3 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SI4378DY-T1-E3 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4378DY-T1-GE3 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4382DY-T1-E3 功能描述:MOSFET 30V 4.7mohm@10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube