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參數(shù)資料
| 型號(hào)： | SI4370DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | SI4370DY |
Si4370DY
Vishay Siliconix
www.vishay.com
2
Document Number: 72022
S-32621—Rev. C, 29-Dec-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
1.0
0.8
3.0
2.0
100
100
1
100
15
2000
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
V
DS
= 0 V, V
GS
=
20 V
12 V
nA
= 30 V V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
A
= 30 V V
= 0 V T
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C
On State Drain Current
On-State Drain Current
b
I
D(on)
= 5 V V
V
DS
= 5 V, V
GS
= 10 V
20
20
A
= 10 V I
= 7 5 A
V
GS
= 10 V, I
D
= 7.5 A
0.014
0.015
0.024
0.020
19
21
0.75
0.47
0.022
0.022
0.030
0.028
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
= 4 5 V I
= 6 5 A
V
GS
= 4.5 V, I
D
= 6.5 A
Forward Transconductance
b
g
fs
= 15 V I
= 7 5 A
V
DS
= 15 V, I
D
= 7.5 A
S
Diode Forward Voltage
b
V
SD
= 1 A V
I
S
= 1 A, V
GS
= 0 V
1.2
0.5
V
Dynamic
a
Total Gate Charge
Q
g
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
7
11
18
11.5
2.9
3.8
2.5
3.5
1.5
Gate Source Charge
Gate-Source Charge
Q
gs
= 15 V
= 4 5 V I
= 7 5 A
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 7.5 A
nC
Gate Drain Charge
Gate-Drain Charge
Q
gd
Gate Resistance
R
g
0.5
1.9
Ch-2
0.5
1.8
1.9
Turn On Delay Time
Turn-On Delay Time
t
d(on)
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9
12
10
10
19
40
9
9
35
28
15
20
17
17
30
66
15
15
55
45
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
= 6
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
I
D
ns
g
Fall Time
t
f
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
= 1 7 A di/dt = 100 A/ s
I
F
= 1.7 A, di/dt = 100 A/ s
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.36
0.004
0.7
3.0
0.50
0.42
0.100
10
20
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
=
30 V, T
J
= 125 C
V
r
= 10 V
Maximum Reverse Leakage Current
I
rm
mA
Junction Capacitance
C
T
50
pF
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| SI4376DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4376DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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| SI4378DY_RC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R-C Thermal Model Parameters |
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