參數(shù)資料
型號(hào): SDR1JSMSTX
廠商: SOLID STATE DEVICES INC
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 1 A, 600 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, SMS, 2 PIN
文件頁數(shù): 2/2頁
文件大小: 156K
代理商: SDR1JSMSTX
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003H
DOC
ELECTRICAL CHARACTERISTICS 3/
Maximum Limit
CHARACTERISTICS
SYMBOL
Package
UNIT
SM
SMS
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 s Pulse, TA = 25C)
SDR1A .. thru SDR1D ..
VF1
1.3
0.96
Vdc
SDR1G .. thru SDR1J ..
1.3
SDR1K .. thru SDR1M ..
2.5
1.9
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 s Pulse, TA = -55C)
SDR1A .. thru SDR1D ..
VF2
1.45
2.1
Vdc
SDR1G .. thru SDR1J ..
1.45
2.1
SDR1K .. thru SDR1M ..
2.65
2.3
Reverse Leakage Current
(Rated VR, 300 s Pulse Minimum , TA = 25C)
SDR1A .. thru SDR1D ..
IR1
5
μA
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
Reverse Leakage Current
(Rated VR, 300 s Pulse Minimum , TA = 100C)
SDR1A .. thru SDR1D ..
IR2
250
μA
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
Junction Capacitance
(VR = 10Vdc, TA = 25C , f = 1MHz)
SDR1A .. thru SDR1D ..
CJ
15
40
pf
SDR1G .. thru SDR1J ..
15
25
SDR1K .. thru SDR1M ..
10
15
Reverse Recovery Time 4/
SDR1A .. thru SDR1D ..
trr
50
ns
SDR1G .. thru SDR1J ..
60
SDR1K .. thru SDR1M ..
70
Round Tab Surface Mount (SM):
DIMENSIONS
Square Tab Surface Mount (SMS) :
DIMENSIONS
DIM.
MIN. MAX.
DIM.
MIN.
MAX.
A
.095” .105”
A
.134” .153”
B
.190” .210”
B
.200” .280”
C
.010” .030”
C
.022” .028”
D
---
D
.002”
---
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR1ASM & SMS
thru
SDR1MSM & SMS
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