參數(shù)資料
型號： S29JL032H90TAI223
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁數(shù)： 32/66頁
文件大?。?/td> 1691K
代理商： S29JL032H90TAI223
36
S29JL032H
S29JL032H_00A11 March 10, 2005
Advan ce
In form ati o n
Figure 4. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. The bank address is required when writing this command. This com-
mand is valid only during the sector erase operation, including the 80 s time-out
period during the sector erase command sequence. The Erase Suspend command
is ignored if written during the chip erase operation or Embedded Program
algorithm. The bank address must contain one of the sectors currently selected
for erase.
When the Erase Suspend command is written during the sector erase operation,
the device requires a maximum of 20 s to suspend the erase operation. How-
ever, when the Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out period and suspends
the erase operation.
After the erase operation has been suspended, the bank enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關(guān)PDF資料
PDF描述
S29WS064N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI112 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI113 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW011 Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29JL032H90TAI310 功能描述:閃存 3V 32Mb Float Gate top boot 2Banks 90s RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29JL032H90TAI311 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI312 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32M BIT CMOS 3.0V FLASH MEMORY
S29JL032H90TAI313 功能描述:閃存 3V 32M SIMULTANEOUS READ/WRITE FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29JL032H90TAI320 功能描述:閃存 3V 32Mb Float Gate btm boot 2Banks 90s RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*