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參數(shù)資料
| 型號： | S29GL128P10TFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁數(shù)： | 25/80頁 |
| 文件大小： | 2706K |
| 代理商： | S29GL128P10TFIV10 |
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November 20, 2009 S29GL-P_00_A12
S29GL-P MirrorBit Flash Family
31
Data
She e t
Figure 7.3 Sector Erase Operation
Notes
1. See Table 12.1 on page 69 for erase command sequence.
2. See DQ3: Sector Erase Timeout State Indicator on page 39 for information on the sector erase timeout.
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FAIL. Write reset command
to return to reading array.
PASS. Device returns
to reading array.
Perform Write Operation
Status Algorithm
Select
Additional
Sectors?
Unlock Cycle 1
Unlock Cycle 2
Yes
No
Last Sector
Selected?
Done?
DQ5 = 1?
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Error condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Poll DQ3.
DQ3 = 1?
Each additional cycle must be written within tSEA timeout
The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
No limit on number of sectors
Commands other than Erase Suspend or selecting additional
sectors for erasure during timeout reset device to reading array
data
(see Figure 7.4)
相關(guān)PDF資料 |
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| S29GL032N90BFI32 | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| S2A | SURFACE MOUNT RECTIFIER |
| S2B | SURFACE MOUNT RECTIFIER |
| S2C1R-1-5-H | 4000 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.7 dB INSERTION LOSS |
| S2D | SURFACE MOUNT RECTIFIER |
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