參數(shù)資料
型號(hào): S29GL128P10TFI010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝: 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù): 39/80頁(yè)
文件大?。?/td> 2706K
代理商: S29GL128P10TFI010
44
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-
enables reads and writes for Sector 0.
10. The programming state of the PPB for a given sector can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in Figure 8.2.
Figure 8.2 PPB Program Algorithm
Read Byte Twice
Addr = SA0
Enter PPB
Command Set.
Addr = BA
Program PPB Bit.
Addr = SA
DQ5 = 1?
Yes
No
Yes
DQ6 =
Toggle?
DQ6 =
Toggle?
Read Byte.
Addr = SA
PASS
FAIL
Issue Reset
Command
Exit PPB
Command Set
DQ0 =
'0' (Pgm.)?
Read Byte Twice
Addr = SA0
No
Wait 500 s
相關(guān)PDF資料
PDF描述
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
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S29GL128P10TFI020 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel