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參數(shù)資料
| 型號： | S268P |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | DIP-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 102K |
| 代理商： | S268P |
S268P
Vishay Semiconductors
2 (5)
Rev. 2, 20-May-99
www.vishay.com
Document Number 81538
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Breakdown Voltage
IR = 100 mA, E = 0
V(BR)
60
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
30
nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
VR = 3 V, f = 1 MHz, E = 0
CD
25
40
pF
Open Circuit Voltage
Ee = 1 mW/cm2
Vo
350
mV
Temp. Coefficient of Vo
Ee = 1 mW/cm2
TKVo
–2.6
mV/K
Short Circuit Current
EA = 1 klx
Ik
70
mA
Ee = 1 mW/cm2, l = 950 nm
Ik
47
mA
Temp. Coefficient of Ik
EA = 1 mW/cm2,
l = 950 nm
TKIk
0.1
%/K
Reverse Light Current
EA = 1 klx, VR = 5 V
Ira
75
mA
g
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Ira
40
50
mA
Reverse Light Current Ratio of
Two Diodes
1:1.2
Angle of Half Sensitivity
±65
deg
Wavelength of Peak Sensitivity
lp
900
nm
Range of Spectral Bandwidth
l0.5
600...1050
nm
Noise Equivalent Power
VR = 10 V, l = 950 nm
NEP
4x10–14
W/
√ Hz
Rise Time
VR = 10 V, RL = 1 kW,
l = 820 nm
tr
100
ns
Fall Time
VR = 10 V, RL = 1 kW,
l = 820 nm
tf
100
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
–
Reverse
Dark
Current
(
nA
)
ro
Tamb – Ambient Temperature ( °C )
100
94 8403
VR=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
020
40
60
80
0.6
0.8
1.0
1.2
1.4
I
–
Relative
Reverse
Light
Current
ra
rel
Tamb – Ambient Temperature ( °C )
100
94 8416
VR=5V
l=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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