
CHAPTER 6: ELECTRICAL CHARACTERISTICS
50
EPSON
S1C60N09 TECHNICAL MANUAL
6.5 Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, board pattern). Use
the following characteristics are as reference values.
S1C60N09 Crystal Oscillation
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
-3.6
Typ.
20
45
Min.
-2.6
-10
35
200
Condition
tsta
≤5sec (VSS)
tstp
≤10sec (VSS)
Including the parasitic capacitance inside the chip
VSS=-2.6 to -3.6V
CG=5 to 25pF
(VSS)
Between OSC1 and VDD, VSS
Unless otherwise specified:
VDD=0V, VSS=-3.0V, fOSC=32.768kHz, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C
S1C60L09 Crystal Oscillation
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
V
pF
ppm
V
M
Max.
5
10
-1.8
Typ.
20
45
Min.
-1.2
-10
35
200
Condition
tsta
≤5sec (VSS)
tstp
≤10sec (VSS)
Including the parasitic capacitance inside the chip
VSS=-1.2 to -1.8V
CG=5 to 25pF
(VSS)
Between OSC1 and VDD, VSS
Unless otherwise specified:
VDD=0V, VSS=-1.5V, fOSC=32.768kHz, Crystal: Q13MC146, CG=25pF, CD=built-in, Ta=25
°C
S1C60N09 CR Oscillation
Item
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC
tsta
Unit
kHz
mS
Max.
84.5
3
Typ.
65
Min.
45.5
Condition
VSS=-2.6 to -3.6V
Unless otherwise specified:
VDD=0V, VSS=-3.0V, RCR=475k
, Ta=25°C
S1C60L09 CR Oscillation
Item
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC
tsta
Unit
kHz
mS
Max.
84.5
3
Typ.
65
Min.
45.5
Condition
VSS=-1.2 to -1.8V
Unless otherwise specified:
VDD=0V, VSS=-1.5V, RCR=475k
, Ta=25°C