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參數(shù)資料
| 型號： | S1227-16BQ |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| 中文描述： | 硅光電二極管對紫外可見，精密光度法;抑制紅外靈敏度 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 153K |
| 代理商： | S1227-16BQ |
Features
l
High UV sensitivity: QE 75 % (
λ
=200 nm)
l
Suppressed IR sensitivity
l
Low dark current
Applications
l
Analytical equipment
l
Optical measurement equipment, etc.
P H O T O D I O D E
Si photodiode
S1227 series
For UV to visible, precision photometry; suppressed IR sensitivity
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Package
Active
area size
Effective
active area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
S1227-1010BR
/Q
/R
/Q
/R
/Q
/R
/Q
/R
2.7 × 15
1.1 × 5.9
5.9
6 × 7.6
2.4 × 2.4
5.7
8.9 × 10.1
5.8 × 5.8
33
15 × 16.5
10 × 10
100
5
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
λ
p
200 nm
He-Ne
Laser
Min. Typ.
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
T
CID
Rise
time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
(G
)
Min. Typ.
(W/Hz
1/2
)
-15
2
202.5 × 10
-15
-15
2
202.5 × 10
-15
5.0 × 10
-15
0.5
5
4.2 × 10
-15
8.0 × 10
-15
0.2
2
6.7 × 10
-15
NEP
Type No.
(nm)
(nm)
Min. Typ. 633 nm (μA) (μA)
0.36 0.10 0.12
0.43
-
-
0.36 0.10 0.12
0.43
-
-
0.36 0.10 0.12
0.43
-
-
0.36 0.10 0.12
0.43
-
-
(pA)
(times/° C)
(μs)
(pF)
S1227-16BQ
S1227-16BR
S1227-33BQ
S1227-33BR
S1227-66BQ
S1227-66BR
S1227-1010BQ
190 to 1000
S1227-1010BR
* Window material Q: quartz glass, R: resin coating
190 to 1000
320 to 1000
190 to 1000
320 to 1000
190 to 1000
320 to 1000
0.34
0.39
0.34
0.39
0.34
0.39
0.34
0.39
2
3.2
3.7
3.0
3.7
16
19
44
53
2.2
2
2.2
11
13
32
36
5
0.5
170
5
0.5
160
20
2
950
320 to 1000
720
50
1.12
7
3000
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1227-16BR | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BQ | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BR | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-66BR | Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1230ABP-70-IND | GT 14C 12#8 2#16 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1227-16BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-66BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-66BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
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