參數資料
型號: S-80822ANUP-EDK-T2
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
封裝: POWER, PLASTIC, SOT-89, 3 PIN
文件頁數: 18/31頁
文件大?。?/td> 412K
代理商: S-80822ANUP-EDK-T2
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808 Series
24
Seiko Instruments Inc.
3.
Change of detection voltage
In Nch open-drain output products of the S-808 Series, detection voltage can be changed using resistance dividers
or diodes as shown in Figures 19 and 20. In Figure 19, hysteresis width is also changed.
n Remarks
In CMOS output products of the S-808 Series, through-type current flows when the device is detecting or releasing. If a high
impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through-type current when
lowering the voltage during releasing.
When designing for mass production using an application circuit described herein, take the product deviation and temperature
characteristic into consideration.
Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein.
(Nch open-drain
products)
RA
OUT
VIN
VS
VDD
Note1: If RA and RB are large, the hysteresis width may be
larger than the value given by the formula above due
to through-type current (which flows slightly in Nch
open-drain circuit).
Note2: RA should be 75k
or less for purpose of protection
against oscillation.
+
-
S-
808XXSN
Figure 19
R
(Nch open-drain
products)
Vf1
OUT
VIN
VS
VDD
S-
808XXSN
Vf2
Detection voltage =
ù -VDET
RA+RB
RB
Hysteresis width =
ù VHYS
RA+RB
RB
Figure 20
Detection voltage =Vf1+Vf2+ (-VDET)
(RA
≤75k)
DISCONTINUED
PRODUCT
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相關代理商/技術參數
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