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參數(shù)資料
| 型號： | RFW2N06RLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | RFW2N06RLE |
6-283
File Number
2838.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFW2N06RLE
2A, 60V 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Features
2A, 60V
r
DS
(on) = 0.160
UIS Rating Curve (Single Pulse)
Design Optimized For 5 Volt Gate Drive
Can be Driven Directly from CMOS, NMOS, TTL
Circuits
Compatible with Automotive Drive Requirements
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Electrostatic Discharge Protected
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
4 PIN HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFW2N06RLE
HEXDIP
RFW2N06RLE
NOTE: When ordering, use the entire part number.
D
G
S
SOURCE
GATE
DRAIN
Data Sheet
July 1999
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