參數(shù)資料
型號: RFP70N06
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
中文描述: 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/16頁
文件大?。?/td> 142K
代理商: RFP70N06
4
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
1.5
3.0
4.5
6.0
7.5
I
D
,
0
40
80
120
160
200
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
D
0
40
80
120
160
200
25
o
C
-55
o
C
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 70A
2.0
1.6
1.2
0.8
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.4
G
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.6
1.2
0.4
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.8
B
I
D
= 250
μ
A
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
RFP70N03, RF1S70N03SM
相關(guān)PDF資料
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RFP70N03 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
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