參數(shù)資料
型號(hào)： RFP70N06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs
中文描述： 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/16頁(yè)
文件大小： 142K
代理商： RFP70N06
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
30
30
±
20
70
200
A
A
Figures 5, 13, 14
150
1.0
-55 to 175
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 9)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 70A, V
GS
= 10V (Figure 8)
-
-
0.010
Turn-On Time
t
ON
V
DD
= 15V, I
D
70A,
R
L
= 0.214
, V
GS
=
10V,
R
GS
= 2.5
-
-
80
ns
Turn-On Delay Time
t
d(ON)
-
20
-
ns
Rise Time
t
r
-
20
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
25
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 24V, I
D
70A,
R
L
= 0.343
I
g(REF)
= 1.0mA
(Figure 12)
-
215
260
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
120
145
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
6.5
8.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 11)
-
3300
-
pF
Output Capacitance
C
OSS
-
1750
-
pF
Reverse Transfer Capacitance
C
RSS
-
750
-
pF
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220, TO-263
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 70A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 70A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
RFP70N03, RF1S70N03SM
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