參數(shù)資料
型號(hào): RFP70N03
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
中文描述: 70 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/16頁(yè)
文件大小: 142K
代理商: RFP70N03
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
D
,
10
-5
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
SINGLE PULSE
0.01
0.5
0.2
0.1
0.05
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
300
100
10
1
1
10
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 30V
100
μ
s
1ms
10ms
100ms
DC
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
300
I
DM
100
0.01
10
0.10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L) (I
AS
)/(1.3 x RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
x R)/(1.3 x RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
1
10
RFP70N03, RF1S70N03SM
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