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參數(shù)資料
| 型號(hào)： | RFP60P03 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | RFP60P03 |
4-142
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
T
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
100ms
DC
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
2
-10
3
t, PULSE WIDTH (ms)
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
-50
T
C
= 25
o
C
RFG60P03, RFP60P03, RF1S60P03SM
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