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參數(shù)資料
| 型號(hào)： | RF2365 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V LOW NOISE AMPLIFIER |
| 中文描述： | 1500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-23, 5 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | RF2365 |
4-217
RF2365
Rev A4 001201
4
G
A
Pin
1
Function
RF IN
Description
RF input pin. This pin is DC coupled.
Interface Schematic
2
3
GND1
PD
Ground connection. See evaluation board schematic notes.
Power down pin. This pin serves as the interstage for the 2-stage LNA.
An inductor is required to pull pin 3 to V
CC
(see application schematic).
If desired, this voltage can be lowered to trade off IP3 versus I
CC,TOTAL
.
(See table below.)
4
5
GND2
RF OUT
Ground connection. See evaluation board schematic notes.
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50
with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
R1
0
75
150
IIP3
+4.0dBm
+2.0dBm
-3.5dBm
I
CC
8.0mA
6.5mA
5.0mA
GND1
RF IN
PD
To Bias
Circuit
PD
To RF
Stages
To Bias
Circuit
GND2
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| RF2365PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V LOW NOISE AMPLIFIER |
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