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參數(shù)資料
| 型號： | RF2364 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 3V PCS LOW NOISE AMPLIFIER |
| 中文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT, 5 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | RF2364 |
Preliminary
4-211
RF2364
Rev A4 010501
4
G
A
Pin
1
Function
RF IN
Description
RF input pin. This pin is DC coupled and matched to 50
.
Interface Schematic
2
GND1
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
can be used to set the bias current for any V
PD
voltage (See Applica-
tion Note).
For driver amplifier applications, this is the Power Down pin for the IC.
V
PD
=2.8V + 0.1V is required for proper operation. V
PD
<0.9V turns off
the Part. External RF bypassing is required. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane. Nominal current required for V
PD
=2.8V is 2.0mA typical and
3.0mA Max (@ V
PD
=2.9V).
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50
with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
3
VPD
4
GND2
5
RF OUT
RF IN
RF OUT
To Bias
Circuit
PD
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