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參數(shù)資料
| 型號(hào)： | RF2363 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | DUAL-BAND 3V LOW NOISE AMPLIFIER |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-23, 8 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 167K |
| 代理商： | RF2363 |
Preliminary
4-203
RF2363
Rev B2 010129
4
G
A
Application S chematic (GS M/DCS )
Evaluation Board S chematic
(Download Bill of Materials from www.rfmd.com.)
22 nF
22 nF
1 pF
2 pF
12 nH
RF OUT1
RF OUT2
100 pF
10 nF
V
CC
RF IN1
RF IN2
3.3 nH
47 pF
10 nF
V
CC
3.9 nH
47 pF
10 nF
100 pF
10 nF
EN2
EN1
5
6
7
8
1
2
3
4
1 k
Note orientation of
package in this schematic.
C1
22 nF
C2
22 nF
C6
1 pF
C5
2 pF
L3
12 nH
C3
100 pF
C4
10 nF
L2
3.3 nH
C7
47 pF
C8
10 nF
L1
3.9 nH
C11
47 pF
C12
10 nF
C10
100 pF
C9
10 nF
EN2
EN1
R1
1 k
50
μ
strip
J1
RF OUT1
VCC
50
μ
strip
J2
RF OUT2
VCC
50
μ
strip
J3
RF IN2
50
μ
strip
J4
RF IN1
5
6
7
8
1
2
3
4
U1
P1-1
EN2
GND
P1-3
EN1
P1-4
VCC
P1
1
2
3
4
CON4
P2
1
2
CON2
GND
P2-1
VCC
0.75 nH
0.75 nH
Note orientation of
package in this schematic.
Notes:
Ground traces on pins 2 and 7 are equivalent to a small
amount of inductance (-1 nH). The dimensions of these
lines are as follows.
Pin 2: L = 56 mils, W = 15 mils, H = 31 mils
Pin 7: L = 56 mils, W = 15 mils, H = 31 mils
Dielectric is FR-4
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PDF描述 |
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| RF2363PCBA | DUAL-BAND 3V LOW NOISE AMPLIFIER |
| RF2364 | 3V PCS LOW NOISE AMPLIFIER |
| RF2364PCBA | 3V PCS LOW NOISE AMPLIFIER |
| RF2365 | 3V LOW NOISE AMPLIFIER |
| RF2365PCBA | 3V LOW NOISE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF2363_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 3V LOW NOISE AMPLIFIER |
| RF2363_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 3V LOW NOISE AMPLIFIER |
| RF2363PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 3V LOW NOISE AMPLIFIER |
| RF2364 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V PCS LOW NOISE AMPLIFIER |
| RF2364_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V PCS LOW NOISE AMPLIFIER |
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