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參數(shù)資料
| 型號： | RF2363 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | DUAL-BAND 3V LOW NOISE AMPLIFIER |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-23, 8 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 167K |
| 代理商： | RF2363 |
Preliminary
4-202
RF2363
Rev B2 010129
4
G
A
RF2363 T heory of Operation and Applic ation Information
The RF2363 contains two independent low noise
amplifiers which have been optimized for dual-band
applications in the GSM (905MHz to 960MHz) and
DCS (1805MHz to 1880MHz) frequency bands. Fabri-
cated using heterojunction bipolar transistor (HBT)
technology, the RF2363 delivers high linear gain at a
very low noise figure and low power consumption.
Internal temperature compensation keeps the gain
tightly controlled over temperature extremes (typically
less than 1dB of gain variation from -40°C to +85°C at
2.8V). A 50
input impedance allows the part to be
connected to standard receiver front end filters without
additional matching components.
MODE CONTROL
The RF2363 incorporates two enable pins (EN1 and
EN2) for biasing the desired LNA according to the table
below.
900MHz LNA
The 900MHz LNA is a single-stage, common emitter
amplifier. Since the input pin contains a DC bias, an AC
coupling capacitor is required at this pin. An external
bias inductor from the output pin (RF OUT1) to VCC
provides DC biasing for the amplifier transistor and
assists in matching the output impedance to the next
receiver stage. A capacitor having a good RF bypass
characteristic at the frequency of operation should be
placed as close as possible to the supply voltage side
of the bias inductor; a low frequency bypass capacitor
should also be included. The EN1 pin supplies VCC to
the bias circuits of the LNA and should also be effec-
tively bypassed with both low and high frequency
capacitors.
1900MHz LNA
The 1900MHz LNA is implemented by two common
emitter stages in cascade. The first stage is biased
through an external inductor at the EN2 pin. This
inductor also acts as an interstage match; a resistor in
parallel with the inductor is recommended to 'de-Q' the
inductor, thus providing a broader band interstage
match. An external bias inductor from the output pin
(RF OUT2) to VCC provides DC biasing for the second
stage transistor and assists in matching the output
impedance to the next receiver stage. Low and high
frequency bypass capacitors should be used on the
supply side of both the EN2 and RF OUT2 bias induc-
tors. An AC coupling capacitor is required at the RF
IN2 pin.
LAYOUT CONSIDERATIONS
To provide optimal balance of gain and linearity, a small
amount of inductance is required in the ground traces
of the PCB. The recommended inductance is between
0.5 and 1.0nH, with 0.75nH used on the Evaluation
Board. Depending on the application, more gain with
less linearity or more linearity with less gain may be
desired. Appropriate adjustment of the ground induc-
tance can accomplish these objectives. Minimizing the
ground inductance will maximize the gain at the
expense of linearity while increasing the ground induc-
tance will increase the linearity at the expense of gain.
It is important to remember that the pin 7 ground induc-
tance affects the performance of both LNAs, while the
pin 2 ground inductance affects only the 1900MHz
LNA.
EN1
GND
GND
VCC
EN2
GND
VCC
GND
Mode
Power Down
1900MHz LNA On
900MHz LNA On
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相關代理商/技術參數(shù) |
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| RF2363_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 3V LOW NOISE AMPLIFIER |
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| RF2363PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:DUAL-BAND 3V LOW NOISE AMPLIFIER |
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| RF2364_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:3V PCS LOW NOISE AMPLIFIER |
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