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參數(shù)資料
| 型號： | RF2363 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | DUAL-BAND 3V LOW NOISE AMPLIFIER |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-23, 8 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 167K |
| 代理商： | RF2363 |
Preliminary
4-200
RF2363
Rev B2 010129
4
G
A
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.0
+10
-40 to +85
-40 to +150
Unit
V
DC
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
800 to 1000
1800 to 2000
MHz
MHz
950MHz Performance
T=25°C, RF=950MHz, V
CC
=2.8V,
EN1=2.8V, EN2=0V
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
16
18
16
34
1.3
+24
-10
20
1.8:1
1.8:1
20
dB
dB
dB
dB
dBm
dBm
dB
EN1=0V
Gain - Isolation
+17
2:1
2:1
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
T=25°C, RF=1850MHz, V
CC
=2.8V,
EN2=2.8V, EN1=0V
1850MHz Performance
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
20
21.5
10
31.5
1.4
+22
-12
30
1.7:1
1.7:1
24
dB
dB
dB
dB
dBm
dBm
dB
EN2=0V
Gain - Isolation
+16
2:1
2:1
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
LNA Select
“Enable” Voltage
“Disable” Voltage
Power Supply
Voltage
V
CC
0
V
V
T=25°C
Specifications
Operating limits
900MHz LNA Enabled, 1900MHz LNA Dis-
abled; total DC current
1900MHz LNA Enabled, 900MHz LNA Dis-
abled; total DC current
EN1=EN2=0V
2.8
V
V
2.5 to 5.0
5
Current Consumption
mA
7.5
mA
1
μ
A
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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