
3-14
RF2317
Rev A16 010816
3
L
A
Absolute Maximum Ratings
Parameter
Device Current
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
250
+18
20:1
-40 to +85
-40 to +150
Unit
mA
dBm
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall (50
)
T=25 °C, I
CC
=180mA, R
C
=11
, 50
Sys-
tem
3dB Bandwidth
Frequency Range
Gain
Noise Figure
Input VSWR
DC
13.5
3000
15.0
MHz
dB
dB
14.5
4.9
1.7
From 100MHz to 1000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
At 100MHz
At 500MHz
At 900MHz
F
1
=400MHz, F
2
=500MHz, F
OUT
=100MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
Output VSWR
2.2
Output IP
3
+42
+40
+38
+63
+25.5
+24
+22
+26
+25
+23
20
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
+37
Output IP
2
Output P
1dB
Saturated Output Power
Reverse Isolation
Thermal
Theta
JC
Maximum Junction Temperature
Mean Time Between Failures
47
153
°C/W
°C
years
years
°C/W
°C
years
years
I
CC
=150mA, P
DISS
=1.3W, T
AMB
=85°C
8.6x10
2
1.8x10
5
54
177
99
9.4x10
3
T
AMB
=+85°C
T
AMB
=+25°C
I
CC
=180mA, P
DISS
=1.7W, T
AMB
=85°C
Theta
JC
Maximum Junction Temperature
Mean Time Between Failures
T
AMB
=+85°C
T
AMB
=+25°C
Power Supply
Device Voltage
8.3
8.7
V
V
On pin 13, I
CC
=150mA
On pin 13, I
CC
=180mA
Actual current determined by V
CC
and R
S
Operating Current Range
100
180
mA
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).