參數(shù)資料
型號： RF1S9640SM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
中文描述： 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 5/7頁
文件大小： 63K
代理商： RF1S9640SM
4-37
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.15
1.00
0.95
0.90
0.85
-80
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
80
120
160
1.05
1.10
I
D
= 250
μ
A
2000
400
00
20
50
C
1200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1600
800
C
ISS
C
OSS
C
RSS
10
30
40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
f
,
0
-10
-20
-30
-40
2
4
6
8
10
-50
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
-0.1
-1.0
-10
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-0.8
-1.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT)
, Total GATE CHARGE (nC)
V
G
,
0
20
40
60
80
-10
- 5
0
V
DS
= -40V
V
DS
= -100V
V
DS
= -160V
I
D
= -11A
IRF9640, RF1S9640SM
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