參數(shù)資料
型號： RF1S9640SM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
中文描述： 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 3/7頁
文件大小： 63K
代理商： RF1S9640SM
4-35
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
-
-
-11
A
Pulse Source to Drain Current
(Note 3)
-
-
-44
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -11A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= -11A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -11A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
300
-
ns
Reverse Recovery Charge
-
1.9
-
μ
C
NOTES:
2. Pulse Test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 9.8mH, R
G
= 25
,
peak I
AS
= 11A. See Figures 15, 16.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
-5
0
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-15
150
-10
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
SINGLE PULSE
0.1
0.02
0.01
0.2
0.5
0.05
P
DM
10
10
-1
1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
T
IRF9640, RF1S9640SM
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