- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374584 > RF1S9630SM (INTERSIL CORP) 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RF1S9630SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | RF1S9630SM |
4-30
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
-100
-1
100
μ
s
10
μ
s
DC
1ms
10ms
100ms
-10
-1
-0.1
-1000
-10
-100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
I
D
,
0
-10
-20
-30
-40
-3
-6
-9
-12
-15
-50
-9V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
V
GS
= -10V
V
GS
= -8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
0
-2
-4
-6
-10
-8
-12
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-16
-8
-20
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -7V
V
GS
= -9V
V
GS
= -8V
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-9
-12
I
D
,
-15
-6
-3
-125
o
C
25
o
C
-55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
1.6
-5
-10
-15
-20
I
D
, DRAIN CURRENT (A)
-25
2.0
0
0.4
0.8
1.2
V
GS
= -10V
V
GS
= -20V
r
D
,
R
)
2.5
1.5
1.0
0.5
040
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.0
80
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
IRF9630, RF1S9630SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S9640SM | 11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
| RF2043 | GENERAL PURPOSE AMPLIFIER |
| RF2043PCBA | TRI R PLUG M 0-23 |
| RF2044 | GENERAL PURPOSE AMPLIFIER |
| RF2045 | GENERAL PURPOSE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S9630SM9A | 功能描述:MOSFET -200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S9640 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S9640SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs |
| RF1S9640SM9A | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1SOCA499K0FT | 制造商:Ohmite Mfg Co 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。