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參數(shù)資料
| 型號(hào)： | RF1S9630SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | RF1S9630SM |
4-29
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
ModifiedMOSFETSymbol
Showing the Integral Re-
verse P-N Junction Diode
-
-
-6.5
A
Pulse Source to Drain Current
(Note 3)
-
-
-26
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= -6.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -6.5A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
400
-
ns
Reverse Recovery Charge
-
2.6
-
μ
C
NOTES:
2. Pulse Test: Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 17.75mH, R
G
= 25
,
peak I
AS
= 6.5A. (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
-2
0
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-10
150
-8
75
125
-4
-6
t
1
, RECTANGULAR PULSE DURATION (s)
Z
q
,
T
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
0.1
0.05
0.02
0.01
0.2
0.5
t
2
IRF9630, RF1S9630SM
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