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參數(shù)資料
| 型號： | RF1S9540SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 59K |
| 代理商： | RF1S9540SM |
4-17
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral Re-
verse
P-N Junction Diode
-
-
-19
A
Pulse Source to Drain Current
(Note 3)
-
-
-76
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= -19A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
170
-
ns
Reverse Recovery Charge
-
0.8
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 4mH, R
G
= 25
, peak I
AS
= 19A. (Figures 15, 16).
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
-5
0
25
75
125
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-15
175
-10
-20
-20
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
o
C
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
SINGLE PULSE
0.1
0.02
0.01
0.2
0.5
0.05
P
DM
10
10
-1
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θ
JC
+ T
C
t
1
t
2
IRF9540, RF1S9540SM
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