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參數(shù)資料
| 型號(hào)： | RF1S70N06SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 588K |
| 代理商： | RF1S70N06SM |
3-48
RFP70N03, RF1S70N03, RF1S70N03SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
r
D
,
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 70A
2.0
1.6
1.2
0.8
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
,
0.4
V
GS
= V
DS
, I
D
= 250
μ
A
G
I
D
= 250
μ
A
2.0
1.6
1.2
0.4
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
B
D
,
0.8
B
0
0
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C
V
GS
= 0V, FREQUENCY (f) = 1MHz
CISS
COSS
CRSS
10
-5
Z
θ
J
,
t, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
10
1
NOTES:
1. DUTY FACTOR, D = t
1
/t
2. PEAK T
J
= P
DM
x (Z
θ
JC
) +T
C
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
0.5
P
DM
t
1
t
2
30.0
22.5
15.0
7.5
0.0
10.0
7.5
5.0
2.5
0.0
t, TIME (
μ
s)
20
IG
)
)
ACT
----------------------
80
IG
)
)
ACT
----------------------
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 0.43
I
G(REF)
= 3.0mA
V
GS
= 10V
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